Diffusion of intrinsic defects in dielectric and semiconductor crystals with impurities

This paper reports on the results of detailed theoretical investigations into the diffusion of intrinsic defects in impurity crystals doped with mixed-valence ions. The special case of diffusion stimulated by variations in the redox properties of the atmosphere at the crystal boundary during high-temperature annealing is analyzed. The major consideration is given to the following fundamental problems: (i) the dynamics of valence transitions and the structure of the chemical reaction zone, (ii) the possibility of determining the type of chemical reaction at the crystal-atmosphere interface and the type of diffusing defects, (iii) the effect of dilatation mechanical stresses arising in the reaction zone on the reaction-zone structure and on the dynamics of diffusion processes, and (iv) the determination of the diffusion parameters of intrinsic defects and the constants of their interaction with impurity centers.