| Influence of Polarization Effects on the Energy Band of AlGaN／GaN／AlGaN Heterostructures |
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| 引用本文： | 文博,江若琏,周建军,姬小利,梁凌燕,孔月婵,沈波,张荣,郑有炓.Influence of Polarization Effects on the Energy Band of AlGaN／GaN／AlGaN Heterostructures[J].中国物理快报,2004,21(4):720-722. |
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| 作者姓名： | 文博 江若琏 周建军 姬小利 梁凌燕 孔月婵 沈波 张荣 郑有炓 |
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| 作者单位： | DepartmentofPhysicsandJiangsuProvincialKeyLaboratoryofPhotonicandElectronicMaterialsScienceandTechnology,NanjingUniversity,Nanjing210093 |
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| 摘 要： | The unintentionally doped samples of Al0.22Ga0.78N/GaN/Al0.22Ga0.78N/GaN multi-heterostructures have been designed and fabricated. The polarization induced charge and free-carrier charge distributions have been demonstrated and the energy band profile has also been calculated. The results indicate the existence of two-dimensional
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| 关 键 词： | 极化作用 能带 铝镓氮／氮化镓／铝镓氮 异质结构 样品掺杂 半导体材料 |
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