| 金属铝诱导法低温制备多晶硅薄膜 |
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| 引用本文： | 夏冬林,杨晟,徐慢,赵修建.金属铝诱导法低温制备多晶硅薄膜[J].影像科学与光化学,2006,24(2):87-92. |
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| 作者姓名： | 夏冬林 杨晟 徐慢 赵修建 |
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| 作者单位： | 武汉理工大学, 硅酸盐材料工程教育部重点实验室, 湖北, 武汉, 430070 |
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| 摘 要： | 以氢气稀释的硅烷(SiH4)和硼烷(B2H6)为气源,利用等离子体增强化学气相沉积法(PECVD)制备出p型a-Si薄膜.采用铝诱导晶化技术对不同厚度的铝膜对a-Si薄膜晶化的影响进行了研究.实验中发现,铝膜溅射为10 s的非晶硅薄膜样品在450℃下退火10 min后,p型a-Si结构仍为非晶态,铝膜溅射为20 s的非晶硅薄膜在450℃下退火20 min后,p型a-Si薄膜开始晶化为poly-Si薄膜,并且铝膜厚度越厚,则a-Si薄膜晶化程度越强.
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| 关 键 词： | 金属铝诱导晶化 快速退火 a-Si薄膜 poly-Si薄膜 |
| 收稿时间： | 2005-09-16 |
Preparation of Polycrystalline Silicon Films by Aluminum-Induced Crystallization at Low Temperature |
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| XIA Dong-lin,YANG Sheng,XU Man,ZHAO Xiu-jian.Preparation of Polycrystalline Silicon Films by Aluminum-Induced Crystallization at Low Temperature[J].Imaging Science and Photochemistry,2006,24(2):87-92. |
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| Authors: | XIA Dong-lin YANG Sheng XU Man ZHAO Xiu-jian |
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| Institution: | Key Laboratory of Silicate Materials Science and Engineering of Ministry of Education, Wuhan University of Technology, Wuhan 430074, Hubei, P. R. China |
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| Abstract: | Polycrystalline silicon films were fabricated by aluminum-induced crystallization.These films are prepared by plasma-enhanced chemical vapor deposition technology from hydrogen-diluted SiH_4 and B_2H_6.The effect of thickness of aluminum films on the microstructure and morphology were investigated.The results were analyzed by XRD,RAMAN and SEM.The thickness of aluminum film was found to play a critical role in the extent of crystallization of a-Si thin film.The experiment indicate that a-Si thin films with thickness of aluminum films for sputtering time 10 s were amorphous structure after annealing 450 ℃ for 20 min,a-Si films with thickness of aluminum film for sputtering time 20 s began to crystallize after annealing at 450 ℃ for 20 min,and the crystallinity of a-Si thin films was enhanced obviously with increment of thickness of aluminum films. |
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| Keywords: | aluminum-induced crystallization rapid thermal annealing polycrystalline silicon thin films amorphous silicon thin films |
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