| 双色制导用InGaAs探测器低温特性的研究 |
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| 引用本文： | 孟庆端,吕衍秋,鲁正雄,孙维国.双色制导用InGaAs探测器低温特性的研究[J].低温物理学报,2010(4). |
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| 作者姓名： | 孟庆端 吕衍秋 鲁正雄 孙维国 |
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| 作者单位： | 河南科技大学电子信息工程学院;中国空空导弹研究院; |
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| 摘 要： | 制备了平面结InGaAs短波红外探测器,分别测量了其在室温及液氮温区的响应光谱、电流～电压曲线和光生信号及噪声,发现其光生信号与室温测量值相比下降了大约50%.在液氮温区的测试结果表明,短波探测器的峰值响应率为Rvp=2.41(107V/W),峰值探测率Dp*=1.51(1012(cmHz)1/2/W.其透射谱的测量表明该探测器的透射率能够超过80%.这些指标能够满足红外双色探测系统的需求。
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| 关 键 词： | 双色探测器 InGaAs 探测率 |
LOW TEMPERATURE CHARACTERISTIC OF InGaAs DETECTOR EMPLOYED IN DUAL-BAND IR GUIDING SYSTEM |
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| MENG Qing-duan, LV Yan-qiu LU Zheng-xiong SUN Wei-guo School of Electronic , Informational Engineering,Henan University of Science , Technology,Luoyang,Henan, Luoyang Optical Electronics Center,Henan.LOW TEMPERATURE CHARACTERISTIC OF InGaAs DETECTOR EMPLOYED IN DUAL-BAND IR GUIDING SYSTEM[J].Chinese Journal of Low Temperature Physics,2010(4). |
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| Authors: | MENG Qing-duan LV Yan-qiu LU Zheng-xiong SUN Wei-guo School of Electronic Informational Engineering Henan University of Science Technology Luoyang Henan Luoyang Optical Electronics Center Henan |
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| Institution: | MENG Qing-duan1,2 LV Yan-qiu2 LU Zheng-xiong2 SUN Wei-guo2 1School of Electronic and Informational Engineering,Henan University of Science and Technology,Luoyang,Henan471003,2 Luoyang Optical Electronics Center,Henan471009 |
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| Abstract: | |
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| Keywords: | dual band detector InGaAs detectivity |
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