Photoluminescent analysis of Zn1-xCdxO alloys |
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| Authors: | DW Ma ZZ Ye YS Yang |
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| Institution: | (1) State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P.R. China;(2) RCDAMP Department of Physics, Pusan National University, Pusan, 609-735, South Korea |
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| Abstract: | The photoluminescent (PL) spectra of Zn1-xCdxO (0≤x≤0.53) alloy films were obtained successfully. A new explanation from the viewpoint of band structure is brought forward
to comprehend the PL nature of the alloy films. According to this explanation, the near-band-energy emissions of the Zn1-xCdxO (x>0) films are caused by the radiative transitions between the Zn4s–Cd5s hybrid level and the O2p level, and the broadenings
of the two levels are responsible for the gradually increased line width of the PL peak of the film; Zn3d and Cd4d orbital
levels have great effects on the band-gap variations of the alloys. In addition, a quadratic equation is put forward to depict
the relationship between the band gaps Eg of the alloys and their Cd contents x, i.e. Eg(x)=3.30-1.22x+1.26x2 (0≤x≤0.53).
PACS 78.55.-m; 78.55.Et; 81.15.Cd |
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