关于ZnSe—ZnS应变超晶格P型导电机理的探讨

本文利用变温Hall测量,证实了我们用MOCVD法生长的No.87—39A ZnSe-ZnS应变超品格(SLS)具有P型导电特性。文中试图从应变超晶格的临界厚度,电学参数、能带结构等方面解释ZnSe-ZnS SLS反型的原因。文中指出,这时的受主能级可能处于ZnS层靠近界面附近,这些受主能级的位置比ZnSc阱中满带顶能量低。

ELECTRICAL CONDUCTION MACHANISM OF p-TYPE ZnSe-ZnS SLS

ZnSe-ZnS strained-layer superlattice was thought to be an important optoelectronic material of blue region,It is very difficult for us to obtain p-type ZnSe semiconductor.Some scientists have manufactured the p-type ZnSe materials.(see Table 1) so far.Using the Van De Pauw-Hall measurement with different temperature.we verified that the ZnSe-ZnS SLS(No.87039, undoping) grown by atmospheric pressure MOCVD was a p-type semiconductor material. The electrical parameters are shown in Table 2.