|
|||||
|
|
Crystal orientation dependence of the in-plane dielectric properties for Ba(Sn0.15Ti0.85)O3 thin films |
|
| Authors: | Sannian Song Lina Gao Jiwei Zhai Xi Yao Zhiqun Cheng |
| Institution: | aFunctional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai, China bKey laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China |
| Abstract: | Barium tin titanate Ba(Sn0.15Ti0.85)O3 (BTS) thin films with (1 0 0), (1 1 0) and (1 1 1) orientation were grown on (1 0 0), (1 1 0) and (1 1 1) LaAlO3 (LAO) single-crystal substrates through sol–gel process, respectively. The in-plane dielectric properties of the films were measured on interdigital capacitor (IDC). Films with the (1 1 1) orientation had larger relative dielectric constant and larger tunability against the dc bias electric field than (1 0 0)- and (1 1 0)-oriented films. This difference in dielectric properties in these three kinds of oriented BTS films may be attributed due to change in the direction and magnitude of electric polarization in orientation engineered BTS films. This work clearly reveals the dielectric properties of BTS films exhibited a strong sensitivity to crystal orientation. |
| Keywords: | Thin films Sol–gel Dielectric properties Orientation Stress |
| 本文献已被 ScienceDirect 等数据库收录！ | |