Effect of impurity on electronic properties of carbon nanotubes |
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Authors: | S Jalili M Jafari J Habibian |
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Institution: | 1. Nanosciences Research Center, K. N. Toosi University of Technology, Tehran, Iran 2. Faculty of Science, K. N. Toosi University of Technology, P.O. Box 16315-1618, Tehran, Iran
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Abstract: | We have studied the effect of impurity on electronic properties of single-walled carbon nanotubes using Density Functional Theory. Electronic band structures and density of states of (4, 4) and (7, 0) carbon nanotubes in the presence of different amount of B and N impurities were calculated. It was found that these impurities have significant effect on the conductivity of carbon nanotubes. The metallic (4, 4) nanotube remains to be metallic after doping with B and N. The electronic properties of small gap semiconducting (7, 0) tube can extensively change in the presence of impurity. Our results indicate that B-doped and N-doped (7, 0) carbon nanotubes can be p-type and n-type semiconductors, respectively. |
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