Characterisation of charge carrier transport in thin organic semiconductor layers by time-of-flight photocurrent measurements |
| |
| Institution: | 1. College of Information Technology, Jilin Normal University, Siping, 136000, PR China;2. State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, PR China;3. College of Physics, Jilin Normal University, Siping, 136000, PR China;4. Institute of Theoretical Chemistry, Jilin University, Changchun, 130023, PR China;1. Institute for Clean Energy and Advanced Materials, Faculty of Materials and Energy, Southwest University, Chongqing 400715, PR China;2. Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, PR China;3. School of Physics and Mechanical & Electrical Engineering, Zunyi Normal College, Zunyi 563002, PR China;4. Electron Science Research Institute, Edith Cowan University, 270 Joondalup Drive, Joondalup, WA 6027, Australia;1. Institute for Molecular Science, 5-1 Higashiyama, Myodaiji, Okazaki, 444-8787, Aichi, Japan;2. Chulalongkorn Univ., 254 Payathai Rd. Patumwan, Bangkok, 10330, Thailand;1. Department of Physics, Kurukshetra University, Kurukshetra 136119, India;2. Department of Physics, Panjab University, Chandigarh 160014, India |
| |
| Abstract: | The paper reviews recent advances in characterisation of charge carrier transport in organic semiconductor layers by time-of-flight photocurrent measurements, with the emphasis on the measurements of the samples with co-planar electrodes. These samples comprised an organic semiconductor layer whose thickness is on the order of a μm or less, and thus mimic the structures of organic thin film transistors. In the review we emphasise the importance of considering spatial variation of electric field in these, essentially two-dimensional structures, in interpretation of photocurrent transients. We review the experimental details of this type of measurements and give examples that demonstrate exceptional sensitivity of the method to minute concentration of electrically active defects in the organic semiconductors as well as the capability of probing charge transport along the channels of different mobility that reside in the same sample. |
| |
| Keywords: | Organic semiconductors Mobility Time-of-flight Thin films |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
