Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance |
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Institution: | 1. Institut d''électronique fondamentale, CNRS UMR 8622, Université Paris-Sud, bâtiment 220, 91405 Orsay cedex, France;2. Molecular Electronics Laboratory, SPEC, CEA Saclay, 91191 Gif-sur-Yvette, France |
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Abstract: | Carbon nanotubes (CNT) appear as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC characteristics of a carbon nanotube field effect transistor (CNTFET). In this work, we present results of a Monte Carlo simulation of a coaxially gated CNTFET, including electron–phonon scattering. Our purpose is to present the intrinsic transport properties of such material through the evaluation of the electron mean-free-path. To highlight the potential of the high performance level of CNTFET, we then perform a study of the DC characteristics and of the impact of capacitive effects. Finally, we compare the performance of CNTFET with that of a Si nanowire MOSFET. To cite this article: H. Cazin d'Honincthun et al., C. R. Physique 9 (2008). |
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