THz emission from semiconductor surfaces |
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| Affiliation: | 1. Institute of Physics, National Academy of Sciences of Belarus, F. Skaryna Ave. 68, 220072 Minsk, Belarus;2. Semiconductor Physics Institute, 01108 Vilnius, Lithuania;3. Department of Semiconductor Physics, Vilnius University, 10222 Vilnius, Lithuania |
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| Abstract: | We provide a review of experimental and theoretical work on electromagnetic terahertz pulse emission from semiconductor surfaces excited by femtosecond laser radiation. The main terahertz emission mechanisms are analysed. The terahertz emission from InAs and Ge is explained by the photo-Dember effect and electric field induced optical rectification. Electronic band structure and carrier scattering mechanisms are investigated by means of terahertz emission and absorption spectroscopy in InAs, InSb and Ge. To cite this article: V.L. Malevich et al., C. R. Physique 9 (2008). |
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