载流子色散型硅基CMOS光子器件

为了实现硅基单片光电子集成器件的实用化,介绍了采用P-I-N、双极型场效应晶体管、金属氧化物半导体和PN结结构的载流子色散型硅基CMOS光子器件的发展状况和特点,并汇报了硅基CMOS光子器件的设计和制作方面的工作.利用商业的CMOS工艺线制作的器件获得了较好的结果,光调制器消光比约18 dB,1×2光开关消光比约21 dB,谐振环的消光比8～12 dB.采用CMOS技术研制硅基光子器件,将能使集成光子学的发展上一个新的台阶.

Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

In order to realize the practical application of the Silicon-based optoelectronic devices,the progress and characteristics of Silicon-based CMOS photonic devices using carrier dispersion effect with structures of P-I-N,Bipolar Mode Field Effect Transistor(BMFET) , Metal Oxide Semiconductor(MOS) and PN junction are reviewed. And our work in design and fabrication of Silicon-based CMOS photonic devices is reported. The devices fabricated by commercial CMOS process have expected results. The extinction ratios of an optical modulator, a 1×2 optical switch and a ring resonator are about 18 dB, 21 dB and 8 ～12 dB, respectively. The introduction of CMOS technology to the design and fabrication of Silicon-based photonic devices will make integrated optics be on a new level.