Luminescence from Si-Si1−xGex/Si1−yCy-Si structures |
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| Authors: | Kenneth B. Joelsson, Galia Pozina, Wei-Xin Ni, Chun-Xia Du,G ran V. Hansson |
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| Affiliation: | Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden |
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| Abstract: | Near band edge photoluminescence has been obtained from Si1−yCy quantum well (QW) and neighboring Si1−xGex/Si1−yCy double QW (DQW) structures. Enhanced no-phonon recombination is observed from the DQW structures and it is attributed to a breaking of the k-selection rule in the presence of the heterointerface. The luminescence persists for measurement temperatures up to 30–50 K and the intensity exhibits a quenching behavior with an activation energy equal to 8–20 meV. In electroluminescence only recombination in the Si1−xGex layer has been observed from neighboring Si1−xGex and Si1−yCy DQW structures. |
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| Keywords: | SiC quantum well SiGe quantum well Photoluminescence Electroluminescence |
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