(1) Department of Electrical Engineering, University of Southern California, 90089 Los Angeles, CA, USA;(2) Department of Electrical Engineering, Yale University, 06520 New Haven, CT, USA
Abstract:
Field-effect transistors consisting of poly(3-hexylthiophene) have been fabricated with high dielectric constant SrBi2Ta2O9 films working as the gate insulator. Significantly enhanced gate effects were observed in these devices compared to similar transistors with conventional SiO2 gate dielectric. Our devices exhibited operating voltages around 10 V, as compared to about 100 V for devices employing SiO2 as the gate dielectric. Moreover, inverters based on such polymer transistors were demonstrated with nice input–output characteristics. PACS 82.35.Cd
