Vertical electron transport study in GaN/AlN/GaN heterostructures |
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Authors: | S. Leconte, E. Monroy,J.-M. G rard |
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Affiliation: | aEquipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9, France |
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Abstract: | In this work, we investigate the electronic structure and vertical electron transport through GaN/AlN/GaN single-barrier structures with different AlN thickness, grown by plasma-assisted molecular beam epitaxy. Conductive and capacitive characterization has been performed, and the experimental results are interpreted by comparison with 1D self-consistent simulations. Capacitive measurements reveal a complete depletion of the top GaN layer, and the formation of a two-dimensional electron gas at the bottom interface of the AlN barrier, even for barrier thicknesses of 0.5 nm (2 monolayers of AlN). Conductive atomic force microscopy reveals discrete leakage current locations with a density of 107 cm−2, more than one order of magnitude lower than the dislocation density in these samples. These results are promising for the fabrication of resonant tunnelling diodes using the GaN/AlN material system. |
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Keywords: | GaN Resonant tunneling diode Two dimensional electron gas Conductive atomic force microscopy |
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