可用于Ⅲ族氮化物生长的50mm 3C-SiC/Si(111)衬底的制备 |
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引用本文: | 孙国胜,张永兴,高欣,王军喜,王雷,赵万顺,王晓亮,曾一平,李晋闽. 可用于Ⅲ族氮化物生长的50mm 3C-SiC/Si(111)衬底的制备[J]. 半导体学报, 2004, 25(10) |
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作者姓名: | 孙国胜 张永兴 高欣 王军喜 王雷 赵万顺 王晓亮 曾一平 李晋闽 |
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作者单位: | 中国科学院半导体研究所,北京,100083 |
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基金项目: | 国家重点基础研究发展计划(973计划),国家高技术研究发展计划(863计划) |
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摘 要: | 利用新研制出的垂直式低压CVD(LPCVD)SiC生长系统,获得了高质量的50mm 3C-SiC/Si(111)衬底材料.系统研究了3C-SiC的n型和p型原位掺杂技术,获得了生长速率和表面形貌对反应气体中SiH4流量和C/Si原子比率的依赖关系.利用Hall测试技术、非接触式方块电阻测试方法和SIMS,分别研究了3C-SiC的电学特性、均匀性和故意调制掺杂的N浓度纵向分布.利用MBE方法,在原生长的50mm 3C-SiC/Si(111)衬底上进行了GaN的外延生长,并研究了GaN材料的表面、结构和光学特性.结果表明3C-SiC是一种适合于高质量无裂纹GaN外延生长的衬底或缓冲材料.
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关 键 词: | 3C-SiC/Si(111)衬底 LPCVD GaN |
Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides |
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Abstract: | 50mm SiC films with high electrical uniformity are grown on Si(111) by a newly developed vertical low-pressure chemical vapor deposition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achieved by intentional introduction of ammonia and boron into the precursor gases.The dependence of growth rate and surface morphology on the C/Si ratio and optimized growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN films are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epitaxy (MBE).The data of both X-ray diffraction and low temperature photoluminescence of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buffer layer for the growth of Ⅲ-nitrides on Si substrates with no cracks. |
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Keywords: | 3C-SiC/Si(111) LPCVD GaN |
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