超薄体MOSFET的结构优化

对UTB器件的各结构参数进行了优化,给出了UTB器件设计的指导方向.在UTB器件的设计中,有三个重要参数,即器件的源漏提升高度、锗硅栅(GexSi1-x)中Ge含量的摩尔百分比和硅膜的厚度,并对这三个结构参数对器件性能的影响进行了模拟分析,给出了器件各结构参数的优化方向,找出了可行Ge含量的摩尔百分比和可行硅膜厚度之间的设计容区.通过模拟分析发现,只要合理选择器件的结构参数,就能得到性能优良的UTB器件.

Design Guideline of Ultra Thin Body MOSFET

Simulation method is used to provide a guideline for ultra thin body(UTB) MOSFET designs.Three important parameters of the UTB MOSFET,i.e.the raised S/D height,Ge mole fraction of the GexSi1-x gate,and the silicon body thickness,are comprehensively analyzed and optimized.The optimal region of feasible Ge mole fraction and the silicon body thickness for low operating power device are given.As the simulation results show that through changing Ge mole fraction coupled with the silicon body thickness tuning,UTB device with good performance can be obtained.