| AlGaN/GaN/InGaN对称分别限制多量子阱激光器的优化设计 |
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| 引用本文： | 陆敏,方慧智,张国义.AlGaN/GaN/InGaN对称分别限制多量子阱激光器的优化设计[J].半导体学报,2004,25(5). |
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| 作者姓名： | 陆敏 方慧智 张国义 |
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| 作者单位： | 北京大学人工微结构和介观物理国家重点实验室,北京大学宽禁带半导体研究中心,北京,100871 |
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| 基金项目： | 国家自然科学基金，国家高技术研究发展计划(863计划) |
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| 摘 要： | 采用一维传递矩阵法模拟计算了AlGaN/GaN/InGaN对称分别限制多量子阱激光器(发射波长为396.6nm)的波导特性.以光限制因子、阈值电流密度和功率效率作为优化参量,获得激光器的优化结构参数为:3周期量子阱In0.02Ga0.98N/In0.15Ga0.85N(10.5nm/3.5nm)作为有源层,90nm In0.1Ga0.9N为波导层,120周期Al0.25Ga0.75N/GaN(2.5nm/2.5nm)为限制层.
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| 关 键 词： | AlGaN/GaN/InGaN MQW SCH |
Optimized Layers Design for AlGaN/GaN/InGaN Symmetrical Separate Confinement Heterojunction Multi-Quantum Well Laser Diode |
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| Lu Min,Fang Huizhi,ZHANG Guoyi.Optimized Layers Design for AlGaN/GaN/InGaN Symmetrical Separate Confinement Heterojunction Multi-Quantum Well Laser Diode[J].Chinese Journal of Semiconductors,2004,25(5). |
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| Authors: | Lu Min Fang Huizhi ZHANG Guoyi |
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| Abstract: | Waveguide characteristics of symmetrical separate confinement heterojunction multi-quantum well (SCH-MQW) AlGaN/GaN/InGaN laser diode (LD) are studied by using one dimensional (1-D) transfer-matrix waveguide approach.Aiming at photon confinement factor,threshold current,and power efficiency,layers design for SCH-MQW LD is optimized.The optimal layers parameters are 3 periods In0.02Ga0.98N/In0.15Ga0.85N QW for active layer,In0.1Ga0.9N for waveguide layer with 90nm thick,and 120×(2.5nm/2.5nm) Al0.25Ga0.75N/GaN supper lattices for cladding layer with the laser wavelength of 396.6nm. |
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| Keywords: | AlGaN/GaN/InGaN MQW SCH |
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