Interface-charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature-dependent resistivity and 2D ‘metallic‘ behavior |
| |
| Authors: | S Das Sarma E H Hwang Igor
uti |
| |
| Institution: | S. Das Sarma, E. H. Hwang,Igor 
uti |
| |
| Abstract: | We present the results on the anomalous 2D transport behavior by employing Drude–Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing experimental data in several different systems and address the origin of the strong and nonmonotonic temperature-dependent resistivity. |
| |
| Keywords: | metal– insulator semiconductor structures metal– insulator transition |
| 本文献已被 ScienceDirect 等数据库收录！ |
