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Numerical study for diffusion processes in dissolution and growth of heterostructures formed by LPE. Part I. Isothermal conditions |
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| Authors: | OV Shcheritsa OS Mazhorova IA Denisov YuP Popov AV Elyutin |
| Institution: | aDepartment of Computer Simulation in Technology, Keldysh Institute of Applied Mathematics RAS, 4 Miusskaya PL, Moscow 125047 Russian Federation bState Institute for Rare Metals, 5, B.Tolmachevskiy, Moscow 109017, Russian Federation |
| Abstract: | The paper deals with computer simulation for growth and dissolution of ternary CdHgTe compounds in liquid-phase epitaxy (LPE) systems. The mathematical model accounts for the matter transport in both solid and liquid phases and the equilibrium phase diagram. The study displays the effect of solid-state diffusion on compositional grading at the substrate-layer boundary, on the formation of concentration distribution in both phases and on interface motion. The simulation has been done for isothermal conditions. |
| Keywords: | A1 Computer simulation A3 Liquid-phase epitaxy B2 Semiconducting ternary compounds |
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