Field ionization processes in field ion microscopy

The processes of field ionization are considered by the time dependent perturbation theory. The metal wave function to be occupied by a tunneling electron from a monovalent atom is approximated by the tight-binding method. The system considered is hydrogen imaging a tungsten-type metal. The (001) crystallographic plane with an interatomic spacing of 3.16 Å and an externally applied electric field of 2.3 V/Å is considered for numerical results. Image formation mechanisms of field ion microscopy are qualitatively discussed.