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Modeling of electron tunneling times in asymmetric double quantum wells
Authors:Huang Yong-Zhen  Wang Chi-Ming
Institution:(1) Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, PR China
Abstract:A scattering process modeled by an imaginary potential V I in the wide well of an asymmetric double quantum well structure (DQWS) is used to model the electron tunneling from the narrow well. Taking V I sim –5 meV, the ground resonant level lifetimes of the narrow well in the DQWS are in quantitative agreement with the experimental resonance and non-resonance tunneling times. The corresponding scattering time 66 fs is much faster than the intersubband scattering time of LO-photon emission.
Keywords:73  40G  73  40L
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