Theoretical analysis of thermal rectification in a bulk Si/nanoporous Si device |
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| Authors: | M Criado-Sancho LF del Castillo J Casas-Vázquez D Jou |
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| Institution: | 1. Departamento de Ciencias y Técnicas Físicoquimicas, Facultad de Ciencias, UNED, Senda del Rey 9, 20040 Madrid, Spain;2. Departamento de Polímeros, Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Ap. 70-360 Coyoacán, México DF, 04510, Mexico;3. Departament de Física, Universitat Autònoma de Barcelona, 08193 Bellaterra, Catalonia, Spain |
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| Abstract: | We present a theoretical analysis of thermal rectification in a porous Si/bulk Si device, taking into account ballistic effects in phonon-pore collisions when phonon mean free path is much longer than the radius of the pores. Starting from an approximate analytical expression for the effective thermal conductivity of porous Si, we obtain the thermal rectifying coefficient of the device as a function of porosity, pore size, temperature interval, and relative lengths of porous and bulk samples. |
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| Keywords: | Heat rectification Porous Si Phonon hydrodynamics Phononics |
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