Evidence for barrier-to-well injection of carriers in high quality ZnO/Zn0.9Mg0.1O multiple quantum wells grown on (111) Si |
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Authors: | XH Pan HP He ZZ Ye B Lu JY Huang |
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Institution: | 1. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People?s Republic of China;2. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People?s Republic of China |
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Abstract: | High quality ZnO/Zn0.9Mg0.1O multiple quantum wells were grown on (111) Si employing epitaxial Lu2O3 buffer layer and a thin ZnO nucleation layer. The linewidth of the low temperature ZnO well emission is only 17 meV. The effective recombination lifetime of emission from ZnO wells is 183 ps. Temperature-dependent photoluminescence is investigated to reveal the behavior of the carriers in the multiple quantum wells. Evidence for the barrier-to-well injection is indicated from the thermal quenching of both the barrier and well emissions. Carrier localization and thermal delocalization are observed in ZnMgO cap/barriers. The depth of the local potential well is determined to be ∼7 meV. |
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Keywords: | Epitaxial ZnO/ZnMgO MQWs Photoluminescence |
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