区熔硅单晶中一种位错源

用化学侵蚀法研究了区熔法生长的硅单晶体中的杂质条,以及由此杂质条的体印压产生的位错环列。实验结果表明,杂质条处在硅中{111}面的〈110〉方向上,杂质条的长度约为5—230μm;其横向尺寸约为2—3μm。我们研究了杂质条体印压产生的位错环列的几何结构。杂质条的尺寸和形状决定了位错环的尺寸和形状。还观察和分析了位错环列交叠产生的位错网络。 关键词：

A DISLOCATION SOURCE IN THE FLOAT-ZONE GROWN SILICON SINGLE CRYSTALS

The impurity-striations and the dislocation loop series produced from the volume indentation by these impurity-striations in the float-zone grown silicon single crystals have been studied by means of chemical etching method. The experimental results have shown that the impurity-striations are oriented in the direction (110) of planes {111} in silicon, the length of the impurity-strialions is about 5-230μm, the dimensions on cross-section are about 2-3 pun. The geometrical structure of the dislocation loop series produced by volume indentation of the impurity-striation has been studied. The form and size of a single dislocation loop depend on the form and size of the impurity-striation. The dislocation networks resulting from the cross-superposition of the dislocation loop series and reactions between these dislocation loops have been observed and analyzed.