| LP-MOCVD生长温度对InGaAs性能的影响 |
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| 引用本文： | 刘宝林,杨树人.LP-MOCVD生长温度对InGaAs性能的影响[J].发光学报,1993,14(4):387-390. |
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| 作者姓名： | 刘宝林 杨树人 |
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| 作者单位： | 吉林大学电子科学系, 长春 130021 |
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| 摘 要： | 众所周知,InGaAs在InP和GaAs二个系列材料中具有最大的载流子迁移率和最大的饱和速率,InGaAs/GaAs应变量子阱可以把GaAs的发射波长从0.83μm延伸到1.1μm1],而InGaAs/InP量子阱激光器又可以实现1.1～1.8μm内任意波长发射2],并且,InGaAs/InP探测器的响应波长范围为0.93μm～1.65μm3],因此,它不论对高速电子器件如HBT和HEMT,还是光电子器件如激光器(LD)和探测器(PIN和APD)都具有极重要的意义。
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| 关 键 词： | 化学汽相沉积 砷钼镓 温度 |
| 收稿时间： | 1993-02-19 |
THE EFFECT OF GROWTH TEMPERATURE ON THE PROPERTIES OF InGaAs BY LP-MOCVD |
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| Liu Baolin Yang Shuren Chen Baijun Wang Benzhong Liu Shiyong.THE EFFECT OF GROWTH TEMPERATURE ON THE PROPERTIES OF InGaAs BY LP-MOCVD[J].Chinese Journal of Luminescence,1993,14(4):387-390. |
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| Authors: | Liu Baolin Yang Shuren Chen Baijun Wang Benzhong Liu Shiyong |
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| Institution: | Department of Electronic Sciences, Jinlin University, Changchun 130021 |
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| Abstract: | InGaAs matched to InP substrate was grown epitaxially By Low Pressure Metalorganic Chemical Vapour Deposition (LP-MOCVD) using TMGa, TMIn and AsH3. The effect of growth temperature on the composition, growth rate, the photoluminescence (PL) intensity and Full Width at Half Maxium (FWHM) have been studied by PL (at 15K), Xray double diffraction and scaning electron microscopy (SME). At an optimum temperature 635-640℃, InGaAs of very good properties can be grown. |
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| Keywords: | LP-MOCVD InGaAs/InP PL |
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