Laser damage of silicon solar cells with different surface states |
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Authors: | Yoshiharu Matsuoka Akira Usami |
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Affiliation: | (1) Department of Physics, Meijo University, Tenpaku-cho, Showa-ku, Nagoya, Japan;(2) Department of Electronics, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Japan |
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Abstract: | An experimental study of the damage of Si solar cells due to Q-switched ruby laser radiation has been made. Four kinds of specimen with different surface states were used in order to examine how the damage depends on the surface state: (a) chemically etched to a mirror finish, (b) mechanically polished by a 0.5 m Al2O3 powder, (c) chemically etched, but rough, (d) coated with SiO on the (c) surface. The threshold power densities, at which a change in the photo-current occurs, were for the specimens (a) to (d) respectively 60 MW cm–2, 20 MW cm–2, 30 MW cm–2 and 9 MW cm–2. Attenuations of the photo-current of the specimens, a, c and d were observed over the whole range of wavelength 500 to 1000 nm. For the b cell, however, increase of the photo-current was observed mainly in the short wavelength region. |
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