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A theoretical interpretation of the electrical behaviour of individual edge dislocations in Si as determined by combined EBIC/TEM studies
Authors:A Ourmazd
Abstract:The EBIC data obtained from individual equation image edge and Frank partial dislocations in Si, and described in other publications, are related to defect parameters, such as the capture cross-section for minority carriers, which determine electrical recombination properties of dislocations. A two stage model for the capture of minority carriers by dislocations is developed and shown to correctly account for the temperature-dependence of the EBIC contrast obtained from these dislocations.
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