On temperature dependence of Debye-Waller factor in V3Si in the temperature range from 8 to 293 K

The temperature dependence of the Debye-Waller factors of vanadium and silicon in V₃Si and that of the X-ray Debye temperature are obtained from the integral intensities of X-ray reflection measured at 11 temperatures ranging from 8 K to 293 K. It shown that the breaks on these curves are observed at T_br = 21.7 K. This fact allows to assume that the phase transition in this compound is accompanied by the rapid change of the atomic vibration frequencies.