Defect Investigations in CdTe Crystals by RXT,SCL, and EBIC(V) Techniques

The paper covers results of investigations on the defect structure of CdTe crystals. Several techniques have been involved, namely RXT supplied with CL-IR, EBIC(V), and SACP using Electron Probe Micro-Analyzer (EPMA): EBIC(V) measurements were performed on Schottky diodes with CdTe-Au contacts. It has to be emphasized that microscopic images at small magnification (45 ×) had successfully been obtained which were next correlated with X-ray topographs. The observed due to grain boundaries, twins, “as grown” dislocations as well as those introduced either during high-temperature plastic deformation or by pyramidal diamond indenter are discussed.