| Abstract: | Single crystals of anhydrous diglycine sulfate are grown at constant temperature by evaporation method. The crystals are grown at various temperatures and their growth rate is determined. A chemical etchant for dislocation studies is reported. The perfection of the crystals grown at various temperatures has been studied using etching technique. It is found that the crystals contained inclusions of the mother liquid. The crystals grown below 28° are almost free of inclusions and the dislocation density is also low. |
