Abstract: | The specific resistance-thickness of ScHx (vacuum 10−5 to 5 · 10−6 Torr) and Sc films (vacuum 1 · 10−8 to 3 · 10−8 Torr) relationships have been obtained by keeping a record of a film resistance directly in the course of condensation. The results are discussed according to the theory FUCHS -SONDHEIMER (ScHx, Sc) and MAYADAS -SHATZKES (Sc) assuming a diffuse scattering of the carriers (P = 0) on the external surface of the films. A mean free path of the current carriers is 188 to 355 Å (T ⋍ 300 K) for ScHx and 400 Å with grain-boundary scattering parameter from 0.1 to 0.3 for Sc. The temperature dependence of specific resistivity of Sc films was obtained in the interval from 300 to 650 K during the annealing in vacuum 5 · 10−9 Torr. |