Growth of gallium antimonide epitaxial layers on indium arsenide substrates

In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the epitaxial structures InAs GaSb. The optimum technological regimes for growth of heterostructures in the system InAs GaSb are found.