Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission |
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Authors: | Z. A. Isakhanov Z. E. Mukhtarov B. E. Umirzakov M. K. Ruzibaeva |
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Affiliation: | 1.Arifov Institute of Electronics,Academy of Sciences of the Republic of Uzbekistan,Akademgorodok, Tashkent,Uzbekistan |
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Abstract: | The type, energy, ion dose, and heating temperature required to ensure a stable minimum work function of a surface in one experimental cycle (at least 2–3 min) are determined. Secondary ion mass spectrograms are recorded using Cs+, Ba+, and Ar+ ions. Cu, Al, and Mo samples are studied. The optimum ion implantation conditions and the activation temperature that provide a stable minimum work function of the sample surfaces are found. The samples implanted by Ba+ ions withstand higher temperature and current loads than the samples implanted by Cs+ ions. However, the work function in the case of Cs+ ions decreases stronger (to 1.9 eV). It is shown that neutral sputtered particles do not leave the surface at eφ ≤ 1.85–1.90 eV. |
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