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Giant flexoelectric effect in ferroelectric epitaxial thin films
Authors:Lee D  Yoon A  Jang S Y  Yoon J-G  Chung J-S  Kim M  Scott J F  Noh T W
Affiliation:ReCFI, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.
Abstract:We report on nanoscale strain gradients in ferroelectric HoMnO(3) epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
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