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溶液法制备金属氧化物薄膜晶体管的研究进展
引用本文:吴宝仔,廖荣,刘玉荣.溶液法制备金属氧化物薄膜晶体管的研究进展[J].半导体技术,2018,43(5):321-334,380.
作者姓名:吴宝仔  廖荣  刘玉荣
作者单位:华南理工大学 电子与信息学院,广州,510640;华南理工大学 电子与信息学院,广州,510640;华南理工大学 电子与信息学院,广州,510640
基金项目:广东省自然科学基金资助项目(2016A030313474)
摘    要:金属氧化物薄膜晶体管(MOTFT)因具有迁移率高、可见光透明、工艺简单、可低温制备等优势,在高性能平板显示、可穿戴柔性电子、集成传感器等领域具有广阔的应用前景.主要回顾了溶液法制备MOTFT的研究进展.首先介绍了溶液法制备MOTFT相对于其他方法的优势,如工艺简单、制作成本低、易掺杂;然后阐述了浸涂法、喷雾法、旋涂法、印刷法加工工艺的特点及优缺点,比较了不同溶液加工工艺所制备MOTFT的电学性能;最后指出了目前溶液法制备MOTFT存在的问题,并从有源层材料与结构、栅介质层材料与界面、退火与预处理3个方面详细地讨论了溶液法制备的优化方法.

关 键 词:薄膜晶体管  金属氧化物半导体  溶液法  电学性能  优化方法

Research Progress of Metal-Oxide Thin-Film Transistors Prepared by Solution Method
Wu Baozai,Liao Rong,Liu Yurong.Research Progress of Metal-Oxide Thin-Film Transistors Prepared by Solution Method[J].Semiconductor Technology,2018,43(5):321-334,380.
Authors:Wu Baozai  Liao Rong  Liu Yurong
Abstract:Due to the advantages of high mobility, visible light transparency, simple process and low temperature preparation, the metal-oxide thin-film transistor (MOTFT) is a very promising device in the fields of high-performance flat panel display, wearable flexible electronics and integrated sensor, etc. The research progress of MOTFTs prepared by solution method is reviewed. Firstly, the advantages of solution method to prepare MOTFTs compared with other methods are described, such as simple craft, low cost and easy doping. Then, the characteristics, advantages and disadvantages of dip coating, spraying, spin coating and printing process of MOTFTs are discussed. Furthermore, the electrical properties of MOTFTs prepared by using different solution processing techniques are compared. Finally, the existing problems of MOTFT prepared by solution method are pointed out, and the optimization methods for solution preparation of MOTFTs are discussed in detail from three aspects of active layer material and structure,gate dielectric layer material and interface, annealing and pretreatment.
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