腐蚀溶液对石墨烯转移质量和GFET性能的影响

对比分析了过硫酸铵(APS)与三氯化铁(FeCl3)两种腐蚀溶液对转移后石墨烯质量的影响.结果表明,采用FeCl3腐蚀溶液转移后的石墨烯表面会引入Fe和Cl离子,而APS腐蚀溶液转移后的石墨烯表面基本未引入杂质.将两种转移到SiO2/Si基底上的石墨烯样品蒸镀100 nm厚的金的源漏电极后分别制成了石墨烯场效应晶体管(GFET),并在室温下对其进行了电学性能测试.测试结果表明,相对于FeCl3腐蚀溶液转移的石墨烯样品制成的器件,采用APS腐蚀溶液转移的石墨烯样品制成器件的狄拉克点从75 V左右降低到了0V左右,载流子迁移率从823 cm2/(V·s)提升到了1 324 cm2/(V·s).因此,采用APS腐蚀溶液转移石墨烯引入杂质更少,制备的器件性能更优越.

Effect of Etchant Solution on Graphene Transfer Quality and GFETs Performance

The effects of two etchant solutions including ammonium persulfate (APS) and ferric chloride (FeCl3) on the quality of graphene after transfer were compared and analyzed.The results show that Fe and Cl ions are introduced on the graphene surface after being transferred by the FeCl3 etchant solution,while there is no residual impurity left on the graphene surface after being transferred by the APS etchant solution.After being evaporated gold source and drain electrodes with a thickness of 100 nm on the graphene samples which transferred on the SiO2/Si substrate,the samples were fabricated into the graphene field effect transistors (GFETs),and their electrical performances were tested at room temperature.The test results show that compared with the device fabricated with the graphene samples transferred by the FeCl3 etchant solution,the Dirac point of the device fabricated with the graphene samples transferred by the APS etchant solution reduces from about 75 V to about 0 V,and the carrier mobility increases from 823 cm2/(V · s) to about 1 324 cm2/(V · s).Therefore,APS is a better etchant solution for graphene transfer with less impurities and better device performances.