SIMS depth profiling of Pd/B<sub>4</sub>C, Ni/C, and Cr/Sc multilayer metal structures using registration of cluster secondary ions: The problem of depth resolution enhancement期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

SIMS depth profiling of Pd/B₄C, Ni/C, and Cr/Sc multilayer metal structures using registration of cluster secondary ions: The problem of depth resolution enhancement

Authors:	M. N. Drozdov Yu. N. Drozdov M. M. Barysheva V. N. Polkovnikov N. I. Chkhalo

Affiliation:	(1) Institute of Nuclear Research (ATOMKI), Hungarian Academy of Sciences, Debrecen, Hungary;(2) KFKI Research Institute for Particle and Nuclear Physics, Budapest, Hungary

Abstract:	The possibility of minimizing matrix effects during the SIMS depth profiling of multilayer metal structures is investigated, based on the use of cluster secondary ions that include a combination of the element to be analyzed and sputtering cesium or oxygen ions. For Pd/B₄C, Ni/C, and Cr/Sc structures, the use of cluster secondary ions enabled us to substantially enhance depth resolution up to 1–2 nm.

Keywords:
本文献已被 SpringerLink 等数据库收录！