Self-organized InGaN nanodots grown by metal-organic chemical vapor deposition system |
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Authors: | Chin-Hsiang Chen |
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Institution: | (1) Department of Electronic Engineering, Cheng Shiu University, Kaohsiung, 830, Taiwan, R.O.C. |
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Abstract: | It has been demonstrated that self-organized InGaN nanodots can be vertically grown by utilizing metal-organic chemical vapor
deposition epitaxy (MOCVD). We report the investigation of the characteristics of InGaN with various indium contents and the
fabrication of self-organized InGaN nanodots will also be discussed. Using a temperature ramping growth method, self-organized
InGaN nanodots were formed vertically protruding above the sample. It was found that typical height of these nanodots is around
45 nm with an average width of 5 nm. It was also found that the local density of the vertically grown self-organized InGaN
nanodots could reach 8.2 × 1012 cm−2. These self-organized InGaN nanodots will result in a red shift in PL spectrum indicating that In droplets act as an indium
source to form an InGaN intermediate layer near the heterointerface. |
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Keywords: | self-organized MOCVD InGaN nanodots PL |
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