| Abstract: | Quantitative analysis of thin films using an electron probe micro-analyser requires the accurate knowledge of the depth distributions of X-ray production (Ø(z) curves) and the influence of the thin film- substrate interface on that distribution. A Gaussian expression for Ø(z) curves has been used which is modified at the interface by the ratio of Ø(0) values. In this way, quantitative predictions of the dependence of X-ray intensity on depth and substrate have been made. Analysis requires the use of only pure element or compound standards. The sensitivity for detection of thin films is about one monolayer for most elements. By measuring X-ray intensity as a function of electron energy, concentration profiles up to a depth of approximately 1 um. can be measured with a depth resolution of the order of 1 nm. in favourable cases. |
