Comparison of nitride-based dual-wavelength light- emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers |
| |
Authors: | Zhang Yun-Yan and Fan Guang-Han |
| |
Institution: | Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China |
| |
Abstract: | The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InAlN electron blocking layer (EBL) are studied. The emission spectra, carrier concentration in the quantum wells (QWs), energy band and internal quantum efficiency (IQE) are investigated. The simulation results indicate that an LED with an InAlN EBL performs better over a conventional LED with an AlGaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used. |
| |
Keywords: | InAlN electron-blocking layer p-type doped barriers numerical simulation dual-wavelength LED |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |