Controlled gold doping of silicon by using ion implantation |
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Authors: | M. Schulz A. Goetzberger I. Fränz W. Langheinrich |
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Affiliation: | 1. Institut für Angewandte Festk?rperphysik, Fraunhofer Gesellschaft, D-7800, Freiburg, Germany 2. AEG-Telefunken, D-7800, Ulm, Germany
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Abstract: | A new technology is suggested to dope silicon devices with gold for carrier life time adjustment with high accuracy and reproducibility. Ion implantation is used to dope the sample with a well defined total amount of gold. This gold dose is redistributed by high temperature anneal. A computer simulation of gold diffusion and experimental radio tracer results show that highly accurate gold doping can be obtained in bulk material when temperatures around 1000 C are applied during the redistribution anneal. Damage free surfaces must be used to reduce the gold content gettered in surfaces. |
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Keywords: | Gold diffusion Ion implantation |
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