Effect of anisotropic pressure on the parameters of silicon diodes |
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Authors: | V. I. Gaman V. F. Agafonnikov |
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Affiliation: | (1) Kuznetsov Siberian Physicotechnical Institute, USSR |
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Abstract: | We analyze experimental data on the effect of external pressure on the following parameters of silicon alloyed diodes: charge capacitance of the p-n junction, lifetime of the minority charge carriers in the diode base, the rate of surface recombination on the base surface, and the reverse current. |
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