Influence of thickness of electrochemically deposited hole-transport film on electroluminescent properties |
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| Authors: | G. Wang T.K.S. Wong X. Hu |
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| Affiliation: | Advanced Materials Research Centre, School of Applied Science, Nanyang Technological University, Nanyang Avenue, Singapore 639798, SG
Photonics Laboratory, School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, SG
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| Abstract: | Polybithiophene (PBTh) film was used as a hole-transport layer in an electroluminescent (EL) device. The PBTh was electropolymerized on indium tin oxide (ITO)-coated glass acting as a working electrode. From the change of full width at half maximum (FWHM) of the EL spectrum with the thickness of the PBTh film, it could be deduced that the PBTh film efficiently blocks the injection of electrons into the ITO electrode. The thickness of the hole-transport layer used in the EL device has a significant influence on the EL intensity and efficiency. Experimental data showed that there is an optimal thickness of the electrodeposited PBTh-hole-transport layer for high-efficiency EL devices. |
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