硅纳米线尖端阵列的制备及其场发射性能研究

将银镜反应与金属催化化学刻蚀相结合，在室温附近成功地制备出了硅纳米线尖端阵列，其长度为4~7 m，中间部分的直径在100~300 nm之间。该方法操作简单、高效、无毒、可控以及低成本，且不需要高温、复杂的设备，对环境也没有特殊要求。性能测试结果显示：该硅纳米材料能够有效实现电子发射，开启电场约为2.7 V/m（电流密度10 A/cm2处）；硅纳米尖端阵列的场增强因子约为692，可应用在场发射器件之上。

Preparation and field emission property of silicon nanotip arrays

Laser devices used in the field of optical-electronics are made of GaAs, InP and so on, which are expensive and hard to be integrated into Si-chip. If a laser device can directly made from silicon, the problems can be solved. A novel strategy for preparing large-area, vertically aligned silicon nanotip arrays at near room temperature by combining silver mirror reaction with metal-catalyzed electroless etching (MCEE) has been developed. It has been demonstrated that the silicon nanotips arrays with a length among 4~7 m and a middle part diameter ranging from 100 to 300 nm have been successfully fabricated on silicon wafers. This method is considerably simple, efficient, nontoxic, controllable and low-cost. Moreover it does not need high temperature, complicated equipments and demanding conditions of environment. At last, the field emission property of the Si nanotip array is primarily tested. The conclusions are as follows: effective electron emission can be obtained by the Si nanotip array; the turn-on field is 2.7 V/m (the current density is 10 A/cm2). The field enhancement factors determined using the F-N curve is 692, the resultant large-area vertically aligned Si nanotips arrays on Si substrate can be expected to be used on field-emitting applications in the future and it will have broad prospects for development.