Phonon focusing of elastically scattered phonons in GaAs |
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Authors: | M T Ramsbey J P Wolfe S Tamura |
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Institution: | (1) Physics Department and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin-Ave, Urbana, Illinois, USA;(2) Department of Engineering Science, Hokkaido University, 060 Sapporo, Japan |
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Abstract: | The propagation of high-frequency phonons through crystals at low temperatures is characterized by both ballistic and diffusive processes. Ballistic propagation of heat pulses is highly anisotropic due to phonon focusing, while diffusive propagation is expected to be nearly isotropic in cubic crystals. By using phonon imaging techniques, we have attempted to identify the heat flux from ballistic and scattered phonons in GaAs. Comparison of this data to Monte Carlo calculations which incorporate elastic scattering shows that the flux from phonons scattered a few times in the bulk retains a significant degree of anisotropy. In particular, a sharp feature discovered by Stock, Ulbrich, and Fieseler and attributed to ballistic propagation of phonons with frequencies up to 1.5 THz is now identified with the scattering of sub-THz phonons. Our analysis provides insights into the evolution of heat propagation from the ballistic to diffusive regimes. |
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