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Gate-controlled rectifying behavior in C70@SWNT networks
Authors:Guo Ao  Fu Yunyi  Liu Jia  Guan Lunhui  Shi Zujin  Gu Zhennan  Huang Ru  Zhang Xing
Affiliation:Department of Microelectronics, Peking University, Beijing, PR China.
Abstract:We report the gate-controlled rectification behavior in C(70)@SWNT networks at room temperature in air. The electrical transport characteristics can be fitted well with the conventional Schottky diode model. The origin of the rectifying behavior in fullerene peapod networks device is qualitatively discussed. This paper demonstrates a strategy for diode fabrication based on peapod networks.
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