Anomalous Hall effect in granular Fe/SiO2 films in the tunneling-conduction regime |
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Authors: | B A Aronzon D Yu Kovalev A N Lagar’kov E Z Meilikhov V V Ryl’kov M A Sedova N Negre M Goiran J Leotin |
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Institution: | (1) Kurchatov Institute Russian Science Center, 123182 Moscow, Russia;(2) Scientific-Research Center for Applied Electrodynamics, 127412, Moscow, Russia;(3) LPMC and SNCMP, 31077 Toulouse Cedex, France |
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Abstract: | It is established that the Hall effect in Fe/SiO2 nanocomposite films in the activational tunneling conduction range is anomalous, i.e., the Hall resistivity ρh is proportional to the magnetization and is due to the spin-orbit interaction. The parametric coupling of the Hall and longitudinal
(ρxx) resistances ρh ∝ ρ
xx
m
(with temperature as the parameter) is characterized by a much lower value of the exponent m than in a uniform ferromagnetic metal. This circumstance is attributed to the characteristic features of the Hall effect
mechanism in the hopping regime — in our case, the interference of the amplitudes of tunneling transitions in a set of three
granules.
Pis’ma Zh. éksp. Teor. Fiz. 70, No. 2, 87–92 (25 July 1999) |
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