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Anomalous Hall effect in granular Fe/SiO2 films in the tunneling-conduction regime
Authors:B A Aronzon  D Yu Kovalev  A N Lagar’kov  E Z Meilikhov  V V Ryl’kov  M A Sedova  N Negre  M Goiran  J Leotin
Institution:(1) Kurchatov Institute Russian Science Center, 123182 Moscow, Russia;(2) Scientific-Research Center for Applied Electrodynamics, 127412, Moscow, Russia;(3) LPMC and SNCMP, 31077 Toulouse Cedex, France
Abstract:It is established that the Hall effect in Fe/SiO2 nanocomposite films in the activational tunneling conduction range is anomalous, i.e., the Hall resistivity ρh is proportional to the magnetization and is due to the spin-orbit interaction. The parametric coupling of the Hall and longitudinal (ρxx) resistances ρh ∝ ρ xx m (with temperature as the parameter) is characterized by a much lower value of the exponent m than in a uniform ferromagnetic metal. This circumstance is attributed to the characteristic features of the Hall effect mechanism in the hopping regime — in our case, the interference of the amplitudes of tunneling transitions in a set of three granules. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 2, 87–92 (25 July 1999)
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