| Au吸附在GaAs（110表面的研究 |
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| 引用本文： | 邱善勤 汪洁英. Au吸附在GaAs（110表面的研究[J]. 北京师范大学学报(自然科学版), 1992, 28(1): 31-36 |
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| 作者姓名： | 邱善勤 汪洁英 |
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| 作者单位： | 北京师范大学物理系，北京联合大学职业技术师范学院，北京师范大学物理系 100875 北京市新外大街，100011 北京市安外，100875 北京市新外大街 |
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| 摘 要： | 研究了Au吸附在GaAs(110)表面的吸附构型,并计算了表面态密度和表面能带结构.计算结果表明,可以认定Au与Ga的悬挂键杂化成键,从而引起2条附加的能带,一条位于禁带之中,距价带顶为0.9ev;另一条与价带共振,离价带顶为0.7ev,所得结果与实验结果相一致.
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| 关 键 词： | 化学吸附 金 砷化镓 表面态密度 |
A RESEARCH IN AURUM CHEMISORPTION ON THE GaAs(110) SURFACE |
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| Qiu Shanqin Wang Jieying Ma Benkun ). A RESEARCH IN AURUM CHEMISORPTION ON THE GaAs(110) SURFACE[J]. Journal of Beijing Normal University(Natural Science), 1992, 28(1): 31-36 |
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| Authors: | Qiu Shanqin Wang Jieying Ma Benkun ) |
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| Affiliation: | Qiu Shanqin Wang Jieying Ma Benkun 1) Department of Physics,Beijing Normal University,100875,Beijing,PRC, 2) Beijing Union University Vocational and Technical Teacher's College,100011,Beijing,PRC |
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| Abstract: | The aurum chemisorption on the GaAs(110) surface is investigated. The energy band structure and the density of surface states are studied and calculated by the infinitive orders perturbation theory developed by K. S. Dy and S. Y. Wu et al. The results show that two surface states are identified by absorption of the aurum on the surface, thereby eliminating the dangling band of gallium on the GaAs(110) surface. The two energy bands are located near Ev + 0.9 eV and Ev-0.7 eV in good agreement with the experiment. |
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| Keywords: | chemisorption chemisorption geometry density of surface state energy band structure |
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