| Hg1-xCdxTe n+-p光电二极管中的深能级及其电流机构的流体静压力研究 |
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| 引用本文： | 袁皓心,李齐光,姜山,陆卫,童斐明,汤定元.Hg1-xCdxTe n+-p光电二极管中的深能级及其电流机构的流体静压力研究[J].物理学报,1990,39(3):464-471. |
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| 作者姓名： | 袁皓心 李齐光 姜山 陆卫 童斐明 汤定元 |
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| 作者单位： | 中国科学院上海技术物理研究所,上海,200083 |
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| 摘 要： | 在流体静压力(0—2GPa)下,对Hg1-xCdxTe n+-p光电二极管(x=0.5)室温电学特性进行了实验和理论研究。通过考虑深能级压力效应及其对深能级辅助隧道电流的影响,较好地解释了实验上观察到的p-n结伏安特性在小偏压范围下呈现的“反常”压力关系。由对实验数据的理论拟合得到两个深能级:D1(=Ev+0.75Eg)和D2(=Ev关键词：
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| 收稿时间： | 1989-04-24 |
HYDROSTATIC PRESSURE STUDIES OF DEEP LEVELS AND RELATED CURRENT MECHANISMS IN Hg1-xCdxTe n+-P PHOTODIODES |
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| YUAN HAO-XIN,LI QI-GUANG,JIANG SHAN,LU WEI,TONG FEI-MING and TANG DING-YUAN.HYDROSTATIC PRESSURE STUDIES OF DEEP LEVELS AND RELATED CURRENT MECHANISMS IN Hg1-xCdxTe n+-P PHOTODIODES[J].Acta Physica Sinica,1990,39(3):464-471. |
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| Authors: | YUAN HAO-XIN LI QI-GUANG JIANG SHAN LU WEI TONG FEI-MING and TANG DING-YUAN |
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| Abstract: | Theoretical and experimental studies have been made about the electrical characteristics of Hg1-xCdxTe n+-p photodiodes with x=0.5 at room temperature and at hydrostatic pressures up to 2GPa. The observed "anomalous" pressure dependence of the current-voltage characteristics of p-n junctions, which exhibits in the small bias region, has been satisfactorily explained using a theory which takes into account the pressure dependence of deep levels and its effect on deep level-assisted tunneling current. By fitting the dark current to this theory, two deep levels, D1(=Ev + 0.75Eg) and D2( = Ev+0.5Eg), as well as their respective electron and hole lifetimes, were obtained. The pressure coefficients of deep levels in undoped Hg1-x Cdx Te were also obtained. |
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